Driven by demand for AI, High Bandwidth Memory (HBM) has become a core pillar of AI computing power thanks to its ultra-high bandwidth, exceptional energy efficiency, and compact size. Currently, there are two mainstream methods for HBM bonding: D2W (Die-to-Wafer) and W2W (Wafer-to-Wafer). D2W (Die-to-Wafer) is a heterogeneous integration process in which wafers are first diced and good bare dies are sorted, after which the dies are picked up one by one and mounted onto a target wafer; Wafer-to-Wafer (W2W) is a batch-processing, homogeneous integration process in which two complete wafers are bonded face-to-face before dicing. FCM provides the corresponding core components for both of these HBM bonding process equipment types.
I.Core Components for D2W Process Equipment—Pulse Heater
Pulse Heater: As the core power source for thermal compression bonding (TCB), it enables high-precision, low-damage interconnections in HBM chip stacking through millisecond-level temperature control, serving as the key engine for advanced packaging processes.

II. Core Components for D2W Process Equipment—Vacuum Heating Vacuum Chuck
Vacuum Heating Suction Cup: As the key support unit in TCB equipment, it eliminates wafer warpage through vacuum suction, providing a bonding interface with micron-level flatness. Simultaneously, acting as a heat source, it provides a precise and uniform preheating environment for the wafer, ensuring bonding yield and reliability.

|
Size
|
6/8/12 inches
|
6/8/12 inches
|
|
Material
|
Al₂O₃
|
AlN
|
|
Adsorption method
|
Vacuum suction
|
Vacuum suction
|
|
Temperature Uniformity
|
≤±1.5%@200℃
|
≤±1.5%@200℃
|
|
Heating and cooling rate
|
≤2℃/min
|
≤10℃/min
|
|
Maximum pressure value
|
100kN
|
120kN
|
|
Flatness
|
≤3μm
|
≤3μm
|
|
Parallelism
|
≤6μm
|
≤10μm
|
III. Core Tooling for D2W Process Equipment—Bonding Nozzles
SiC Suction Nozzles: Utilizing the principle of vacuum suction to hold the die, these nozzles can be used in combination with bonding hot press heads to enable bonding compatible with multiple die sizes.

|
Size
|
Customized
|
|
Material
|
SiC
|
|
Adsorption method
|
Vacuum suction
|
|
Thermal Conductivity
|
>120 W/ (m·K)
|
|
Thermal Shock Resistance
|
500℃
|
|
Maximum pressure value
|
120kN
|
|
Flatness
|
≤0.3μm
|
|
Parallelism
|
≤0.6μm
|
Aluminum Nitride Electrostatic Heating Chuck: With its excellent thermal conductivity and chemical stability, it serves as the cornerstone for achieving precise wafer temperature control in semiconductor manufacturing.

|
Size
|
6/8/12 inches
|
|
Material
|
AlN
|
|
Adsorption method
|
Vacuum suction
|
|
Temperature Uniformity
|
≤±1.5%@200℃
|
|
Heating and cooling rate
|
≤10℃/min
|
|
Maximum pressure value
|
120kN
|
|
Flatness
|
≤3μm
|
|
Parallelism
|
≤10μm
|