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Heating System Solutions for HBM Wafer Bonding
Heating System Solutions for HBM Wafer Bonding
Heating System Solutions for HBM Wafer Bonding

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Driven by demand for AI, High Bandwidth Memory (HBM) has become a core pillar of AI computing power thanks to its ultra-high bandwidth, exceptional energy efficiency, and compact size. Currently, there are two mainstream methods for HBM bonding: D2W (Die-to-Wafer) and W2W (Wafer-to-Wafer). D2W (Die-to-Wafer) is a heterogeneous integration process in which wafers are first diced and good bare dies are sorted, after which the dies are picked up one by one and mounted onto a target wafer; Wafer-to-Wafer (W2W) is a batch-processing, homogeneous integration process in which two complete wafers are bonded face-to-face before dicing. FCM provides the corresponding core components for both of these HBM bonding process equipment types.

 

I.Core Components for D2W Process Equipment—Pulse Heater

 

Pulse Heater: As the core power source for thermal compression bonding (TCB), it enables high-precision, low-damage interconnections in HBM chip stacking through millisecond-level temperature control, serving as the key engine for advanced packaging processes.

 

II. Core Components for D2W Process Equipment—Vacuum Heating Vacuum Chuck

 

Vacuum Heating Suction Cup: As the key support unit in TCB equipment, it eliminates wafer warpage through vacuum suction, providing a bonding interface with micron-level flatness. Simultaneously, acting as a heat source, it provides a precise and uniform preheating environment for the wafer, ensuring bonding yield and reliability.

Size

6/8/12 inches

6/8/12 inches

Material

Al₂O₃

AlN

Adsorption method

Vacuum suction

Vacuum suction

Temperature Uniformity

≤±1.5%@200℃

≤±1.5%@200℃

Heating and cooling rate

≤2℃/min

≤10℃/min

Maximum pressure value

100kN

120kN

Flatness

≤3μm

≤3μm

Parallelism

≤6μm

≤10μm

 

 

III. Core Tooling for D2W Process Equipment—Bonding Nozzles

 

SiC Suction Nozzles: Utilizing the principle of vacuum suction to hold the die, these nozzles can be used in combination with bonding hot press heads to enable bonding compatible with multiple die sizes.

Size

Customized

Material

SiC

Adsorption method

Vacuum suction

Thermal Conductivity

>120 W/ (m·K)

Thermal Shock Resistance

500℃

Maximum pressure value

120kN

Flatness

≤0.3μm

Parallelism

≤0.6μm

 

 

IV. Core Component of W2W Process Equipment—Aluminum Nitride Electrostatic Chuck

 

Aluminum Nitride Electrostatic Heating Chuck: With its excellent thermal conductivity and chemical stability, it serves as the cornerstone for achieving precise wafer temperature control in semiconductor manufacturing.

Size

6/8/12 inches

Material

AlN

Adsorption method

Vacuum suction

Temperature Uniformity

≤±1.5%@200℃

Heating and cooling rate

≤10℃/min

Maximum pressure value

120kN

Flatness

≤3μm

Parallelism

≤10μm